<^>.ml-(2ona.uctoi lpioaucti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn - MJ15022, mj15024* *mj15024 is a preferred device silicon power transistors the MJ15022 and mj15024 are powerbase power transistors designed for high power audio, disk head positioners and other linear applications. features ? high safe operating area (100% tested) - 2 a @ 80 v ? high dc current gain - hfe = 15 (min) @ ic = 8 adc maximum ratings thermal characteristics 16 amperes silicon power transistors 200 - 250 volts, 250 watts rating collector-emitter voltage mj 15022 mj 15024 collector-base voltage mj 15022 mj 15024 emitter-base voltage collector-emitter voltage collector current - continuous - peak (note 1) base current - continuous total device dissipation @ tc = 25"c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo vcex ic ib pd tj, ts(g value 200 250 350 400 5 400 16 30 5 250 1.43 -65 to +200 unit vdc vdc vdc vdc adc adc w w/"c c (to-3) characteristics thermal resistance, junction-to-case symbol rhjc max 0.70 unit jc/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished hy nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn-MJ15022, mj15024* electrical characteristics (tc = 25=c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (note 2) (lc = loomadc, ib = 0) MJ15022 mj 15024 collector cutoff current (vce = 200 vdc, vbe(off) = 1.5 vdc) mj 1 5022 (vce = 250 vdc, vbe(0ff) = 1.5 vdc) mj15024 collector cutoff current (vce = 150 vdc, ib = 0) mj 15022 (vce = 200 vdc, ib = 0) mj1 5024 emitter cutoff current (vce = 5 vdc, ib = 0) vceo(sus) 'cex 'ceo !ebo 200 250 - : ? - 250 250 500 500 500 (iadc iiadc |.iadc second breakdown second breakdown collector current with base forward biased (vce = 50 vdc, t = 0.5 s (non-repetitive)) (vce = 80 vdc, t = 0.5 s (non-repetitive)) 's/b 5 2 - - adc on characteristics dc current gain (lc = 8 adc, vce = 4 vdc) (lc = 16 adc, vce = 4 vdc) collector-emitter saturation voltage (lc = 8adc, ib = 0.8 adc) (lc = 16 adc, ib = 3.2 adc) base- emitter on voltage (lc = 8 adc, vce = 4 vdc) hfe vce(sat) vbe(on) 15 5 - - - 60 - 1.4 4.0 2.2 - vdc vdc dynamic characteristics current-gain - bandwidth product (lc = 1 adc, vce = 10 vdc, f,est = 1 mhz) output capacitance (vcb = 10 vdc, ie = 0, ftest = 1 mhz) ft cob 4 " ? 500 mhz pf 2. pulse test: pulse width = 300 us, duty cycle < 2%. 100 50 1 20 ^ 10 1c, collector curr! cd p ? t. cn ? ?? ro o o _ - - e - t ( b l ondi heru 5ingl ecoi> mite ngwif 1al lim epuls idbre d - e it/ e w *\m vtic d0\ te n |
